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CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
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机译:在氟碳蚀刻化学中使用H2添加剂掺杂碳的氧化硅蚀刻
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摘要
Certain embodiments include an etching method (200 and 1600) including providing an etch material (210), applying a gas mixture including hydrogen (230) forming a plasma (240), and etching the etch material (250). The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H20 gases. The hydrogen-free fluorocarbon gas can be a CXFY gas (where x≥1 and Y≥1) and the hydrofluorocarbon gas can be a CXHYFZ gas (where x≥1, y≥1 and z≥l). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.
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机译:某些实施例包括蚀刻方法(200和1600),其包括提供蚀刻材料(210),施加包括氢的气体混合物(230)以形成等离子体(240)以及蚀刻蚀刻材料(250)。蚀刻材料可以包括低k介电材料。气体混合物可以包括氢气,无氢的碳氟化合物和氮气,并且还包括氢氟碳化合物气体,惰性气体和/或一氧化碳气体中的一种或多种。氢气可以是双原子氢,烃,硅烷和/或无氟氢气,包括H 2,CH 4,C 2 H 4,NH 3和/或H 2 O气体。无氢碳氟化合物气体可以是CXFY气体(其中x≥1和Y≥1),而氢氟碳化合物气体可以是CXHYFZ气体(其中x≥1,y≥1和z≥l)。气体混合物可以不含氧气。实施例可包括降低的压力,降低的氢气流速和一个或多个等离子体频率。
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