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PRESSURE CONTROL AND PLASMA CONFINEMENT IN A PLASMA PROCESSING CHAMBER

机译:等离子体处理室中的压力控制和等离子体约束

摘要

A plasma apparatus (10) which includes a vacuum chamber (12) provided with an e haust port (14) and a chuck assembly disposed inside the vacuum chamber. The p: sma apparatus also includes a plasma confinement and pressure control apparatus (40) disposed proximate to the substrate. The plasma confinement and pressure c ntrol apparatus includes a plurality of ring members (42) disposed adjacent to ach other in a superposed fashion and a plurality of lift assemblies (44) disposed along a circumference of the plurality of ring members. The plurality of lift assemblies are arranged to support the plurality of ring members. The plasma confinement apparatus further includes at least one lift mechanism connected to the lift assemblies. The lift mechanism is configured to translate at least one of the plurality of ring members relative to a reference plane and to tilt at least one of the plurality of the ring membA plasma apparatus which includes a vacuum chamber provided with an exhaust port and a chuck assembly disposed inside the vacuum chamber. The plasma apparatus also includes a plasma confinement and pressure control apparatus disposed proximate to the substrate. The plasma confinement and pressure control apparatus includes a plurality of ring members disposed adjacent to each other in a superposed fashion and a plurality of lift assembies disposed along a circumference of the plurality of ring members. The plurality of lift assemblies are arranged to support the plurality of ring members. The plasma confinement apparatus further includes at least one lift mechanism connected to the lift assemblies. The lift mechanism is configured to translate at least one of the plurality of ring members relative to a reference plane and to tilt at least one of the plurality of the ring members relative to the reference plane.
机译:一种等离子体装置(10),其包括:真空室(12),其具有排出口(14);以及卡盘组件,其设置在真空室内。 p:sma设备还包括靠近基板布置的等离子体限制和压力控制设备(40)。等离子体限制和压力控制设备包括:多个环形构件(42),它们彼此叠置设置;以及多个提升组件(44),其沿着多个环形构件的圆周设置。多个升降组件布置成支撑多个环形构件。等离子体限制装置还包括至少一个与升降组件连接的升降机构。提升机构构造成相对于参考平面平移多个环形构件中的至少一个,并使多个环形membA等离子体装置中的至少一个倾斜,该等离子体装置包括设置有排气口和卡盘组件的真空室。设置在真空室内。等离子体设备还包括紧邻基板布置的等离子体限制和压力控制设备。等离子体限制和压力控制设备包括以重叠的方式彼此相邻布置的多个环形构件和沿着多个环形构件的圆周布置的多个提升组件。多个升降组件布置成支撑多个环形构件。等离子体限制装置还包括至少一个与升降组件连接的升降机构。提升机构构造成使多个环形构件中的至少一个相对于参考平面平移并且使多个环形构件中的至少一个相对于参考平面倾斜。

著录项

  • 公开/公告号WO2005119735A1

    专利类型

  • 公开/公告日2005-12-15

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;FINK STEVEN T.;

    申请/专利号WO2005US08196

  • 发明设计人 FINK STEVEN T.;

    申请日2005-03-10

  • 分类号H01J37/32;

  • 国家 WO

  • 入库时间 2022-08-21 21:33:24

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