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Pressure control and plasma confinement in a plasma processing chamber

机译:等离子处理室内的压力控制和等离子封闭

摘要

A plasma apparatus which includes a vacuum chamber provided with an exhaust port and a chuck assembly disposed inside the vacuum chamber. The plasma apparatus also includes a plasma confinement and pressure control apparatus disposed proximate to the substrate. The plasma confinement and pressure control apparatus includes a plurality of ring members disposed adjacent to each other in a superposed fashion and a plurality of lift assemblies disposed along a circumference of the plurality of ring members. The plurality of lift assemblies are arranged to support the plurality of ring members. The plasma confinement apparatus further includes at least one lift mechanism connected to the lift assemblies. The lift mechanism is configured to translate at least one of the plurality of ring members relative to a reference plane and to tilt at least one of the plurality of the ring members relative to the reference plane.
机译:一种等离子体装置,包括:具有设置有排气口的真空室;和设置在真空室内部的卡盘组件。等离子体设备还包括紧邻基板布置的等离子体限制和压力控制设备。等离子体限制和压力控制设备包括以重叠的方式彼此相邻设置的多个环形构件和沿着多个环形构件的圆周设置的多个升降组件。多个升降组件布置成支撑多个环形构件。等离子体限制装置还包括至少一个与升降组件连接的升降机构。提升机构构造成使多个环形构件中的至少一个相对于参考平面平移并且使多个环形构件中的至少一个相对于参考平面倾斜。

著录项

  • 公开/公告号US2005263070A1

    专利类型

  • 公开/公告日2005-12-01

    原文格式PDF

  • 申请/专利权人 STEVEN T. FINK;

    申请/专利号US20040852450

  • 发明设计人 STEVEN T. FINK;

    申请日2004-05-25

  • 分类号H05H1/24;C23C16/00;

  • 国家 US

  • 入库时间 2022-08-21 21:43:55

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