METHOD FOR FORMING GaN FILM, SEMICONDUCTOR DEVICE, METHOD FOR FORMING GROUP III NITRIDE THIN FILM, AND SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE THIN FILM

摘要

Disclosed is a nitride semiconductor device (10) having a GaN film wherein a GaN layer (12) is formed on a planarized surface of a ZnO substrate (11). The GaN layer (12) is formed by a first film-forming step wherein GaN is epitaxially grown at a temperature not more than 300˚C and a second film-forming step wherein GaN is epitaxially grown on the GaN film formed in the first film-forming step at a temperature of not less than 550˚C.