SRAM type memory element, memory comprising such a memory element, associated reading method and writing method

摘要

The unit has a reference transistor (TC) with a drain coupled to a node (A) and a source coupled to a reference line (BLREF). A cut off potential (GND) is applied to a gate of the transistor (TC). An access transistor (TB), coupled to the transistor (TC), has a drain coupled to a node (B), a gate coupled to a word line (WL), and a source coupled to a write line (BL) on which a write potential is applied. Independent claims are also included for the following: (A) a memory comprising a set of memory units (B) a method of reading a memory unit.