Method of forming a nanorelief structure on a film surface

摘要

A method of forming an undulating nanorelief structure on a film (3) surface comprising the steps of: applying an amorphous silicon layer (4) on the underlying film (3); dispersing the amorphous silicon surface with the ion flow of nitrogen molecules (5) in vacuum, whereby the nitrogen ion energy, nitrogen ion-beam angle with respect to the amorphous silicon surface, the depth of nanorelief structure and the altitude of the nanorelief structure being selected on the basis of the wavelength value of the periodic nanorelief structure being in the range of 30-180 nm: the step of dispersing the amorphous silicon surface being carried out until the nanostructure is formed located from the surface of the underlying film at the distance of one third of the wavelength of the nanorelief structure and with the wave crest orientation obliquely to the direction of the ion flow projection onto the amorphous silicon surface; transferring the nanorelief structure onto the underlying film surface by removing the nanorelief structure and film materials by ion-beam or plasma etching.