This invention is the operating voltage of the light emitting device by the addition of In during growth of the n-type nitride semiconductor layer and a leakage It will reduce the current and on the nitride semiconductor light-emitting device that can improve the luminance property at the same time. The present invention is a substrate; It formed on the substrate, doped with n-type dopant and an n-type nitride semiconductor layer which includes In; An active layer formed on said n-type nitride semiconductor layer; The p-type nitride semiconductor layer formed on the active layer is doped with p-type dopant; And provides a nitride semiconductor light-emitting device, characterized in that each electrode comprises a formed on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. According to the invention, by the addition of In when growing the n-type nitride semiconductor layer, the effect of the amount of Si increases in the electrical conductivity of the n-type GaN layer to lower the operating voltage of the light-emitting device by improving the carrier to be used and, since the amount of Si to be disabled may be reduced to improve the crystallinity of the n-type nitride semiconductor layer, the nitride semiconductor light emitting device and the reverse voltage characteristics of the leakage current and enhance the current spreading in the n-type GaN layer, It is improved.
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