FORMATION METHOD OF COUPLED QUANTUM DOT STRUCTURE

摘要

This invention is a single layer or multi-layer structure including a quantum dot formed in the nature of voluntary capture the charge carriers of by placing a metal probe on the upper semiconductor layer between the coupled quantum structure forming the quantum dot and the spontaneous focal artificial quantum dot according to the inversion layer by inversion regions formed in the semiconductor layer so that the spontaneous formation of the upper quantum dots by applying an electric field between the metal tip and the semiconductor forms . According to the invention, the new coupled quantum structure is possible, and it is possible that new quantum device using the same .