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ETCHANT FOR METAL LAYERS AND METHOD FOR ETCHING METAL LAYERS USING THE SAME AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THE ETCHANT
ETCHANT FOR METAL LAYERS AND METHOD FOR ETCHING METAL LAYERS USING THE SAME AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THE ETCHANT
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机译:用于金属层的蚀刻剂和使用该蚀刻剂的金属层的蚀刻方法以及使用该蚀刻剂制造液晶显示装置的方法
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摘要
The present invention provides a metal wiring etching solution for etching a metal wiring composed of a copper / molybdenum (alloy) film, a metal wiring etching method using the same, and a method of manufacturing a liquid crystal display device using the etching solution. In order to achieve the above object, the metallization etching solution of the present invention is based on the total weight of the composition, 12 to 35% by weight of hydrogen peroxide, 0.5 to 5% by weight of sulfate, 0.5 to 5% by weight of phosphate, 0.001 to Fluoride capable of providing fluoride ions to 0.5% by weight of the composition, 0.1 to 5% by weight of water-soluble cyclic amine compound, 0.1 to 5% by weight of chelating agent and deionized water so that the total weight of the total composition is 100% by weight Characterized in that it comprises a.
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