首页> 外国专利> ETCHANT FOR METAL LAYERS AND METHOD FOR ETCHING METAL LAYERS USING THE SAME AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THE ETCHANT

ETCHANT FOR METAL LAYERS AND METHOD FOR ETCHING METAL LAYERS USING THE SAME AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THE ETCHANT

机译:用于金属层的蚀刻剂和使用该蚀刻剂的金属层的蚀刻方法以及使用该蚀刻剂制造液晶显示装置的方法

摘要

The present invention provides a metal wiring etching solution for etching a metal wiring composed of a copper / molybdenum (alloy) film, a metal wiring etching method using the same, and a method of manufacturing a liquid crystal display device using the etching solution. In order to achieve the above object, the metallization etching solution of the present invention is based on the total weight of the composition, 12 to 35% by weight of hydrogen peroxide, 0.5 to 5% by weight of sulfate, 0.5 to 5% by weight of phosphate, 0.001 to Fluoride capable of providing fluoride ions to 0.5% by weight of the composition, 0.1 to 5% by weight of water-soluble cyclic amine compound, 0.1 to 5% by weight of chelating agent and deionized water so that the total weight of the total composition is 100% by weight Characterized in that it comprises a.
机译:本发明提供一种用于蚀刻由铜/钼(合金)膜构成的金属布线的金属布线蚀刻液,使用该金属布线蚀刻液的金属布线蚀刻方法以及使用该蚀刻液的液晶显示装置的制造方法。为了实现上述目的,本发明的金属化蚀刻液基于组合物的总重量,12至35重量%的过氧化氢,0.5至5重量%的硫酸盐,0.5至5重量%。重量的磷酸盐,可提供氟离子的0.001至氟化物(占组合物的0.5%),水溶性环胺化合物的0.1至5%(重量),螯合剂和去离子水的0.1至5%(重量),总组合物的总重量为100重量%。

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