LIGHT-EMITTING GALLIUM NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR DEVICE WITH POLARIZATION INVERTED LAYER

摘要

A GaN-based light emitting diode with polarization inverted layer is disclosed. A polarization inverted layer is set between a transmitting light conductive layer and a p-type semiconductor layer for transforming Gapolarization to N-polarization of the surface of p type semiconductor layer to reduce the contacting resistance and the working voltage between the transmitting light conductive layer and the p type semiconductor layer and raise efficiency of light extracting, and further increase externak quantum efficiency.