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A gas supply device for semiconductor manufacturing equipment and the gas supply method

机译:半导体制造设备的气体供给装置及气体供给方法

摘要

PURPOSE: A method for the device of supplying gas, which can increases the rate of decomposing gas, saves energy and decomposes dinitrogen monoxide gas at normal temperature provided to produce a high-quality wafer. CONSTITUTION: A valve(40) which can open and close in option is installed at discharge pipe(12), and lamp(20) is installed outside chamber(10). Window(50) made with quartz is installed outside chamber(10) so that the light from lamp(20) can penetrate inside a chamber(10). Thereby, once dinitrogen monoxide penetrates inside lamp(20) through a gas input line(11), the light from a source of light searches the dinitrogen monoxide, and the dinitrogen monoxide is photo decomposed by the energy of the light. Agitator(30) lets the photo decomposed nitrogen ions circulate within chamber(10) lets it should be mixed with NO gas again, and the dinitrogen monxide, when valve(40) is opened, is supplied to processing chamber(30) through discharge pipe(12) in order to form nitride layer by precipitating the photo decomposed nitrogen ions oxide film.
机译:用途:一种用于提供气体的装置的方法,该方法可以提高分解气体的速率,节省能量并在常温下分解一氧化二氮气体,以生产出高质量的晶片。组成:一个可以随意打开和关闭的阀(40)安装在排放管(12)上,而灯(20)安装在腔室(10)的外面。由石英制成的窗户(50)安装在腔室(10)的外部,以使来自灯(20)的光可以穿透腔室(10)的内部。从而,一氧化二氮一旦通过气体输入管线(11)渗透到灯(20)内,来自光源的光就会搜索一氧化二氮,并且一氧化二氮被光的能量分解。搅拌器(30)使光分解的氮离子在腔室(10)中循环,使其应再次与NO气体混合,打开阀门(40)时,一氧化二氮通过排放管供应到处理腔室(30)。 (12)为了通过沉淀光分解的氮离子氧化膜形成氮化物层。

著录项

  • 公开/公告号KR100532358B1

    专利类型

  • 公开/公告日2006-02-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR19980039071

  • 发明设计人 이선영;이은구;

    申请日1998-09-21

  • 分类号H01L21;

  • 国家 KR

  • 入库时间 2022-08-21 21:24:32

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