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GAS SUPPLY METHOD FOR SEMICONDUCTOR MANUFACTURING DEVICE, GAS SUPPLY SYSTEM AND SEMICONDUCTOR MANUFACTURING DEVICE

机译:用于半导体制造设备的气体供应方法,气体供应系统和半导体制造设备

摘要

PROBLEM TO BE SOLVED: To perform a pressurization step and an exhaustion step in plasma processing which repeats a first process and a second process.SOLUTION: A gas supply method includes: a first pressurization step which controls communication between first and second gas pipes and a diffusion chamber 16a by opening and closing first and second valves 11 and 12, discharges gas in the first and second gas pipes by opening and closing third and fourth valves 13 and 14 connected to an upper stream side than the first and second valves of the first and second gas pipes, closes the first valve and the third valve before the first process, and increases pressure of first gas in the first gas pipe; a second pressurization step which closes the second valve and the fourth valve before the second process and increases pressure of second gas in the second gas pipe; and an exhaustion step which controls communication between an exhausting pipe and the diffusion chamber by opening and closing a fifth valve 15, opens the fifth valve in accordance with the start of the first process and the second process, and exhausts gas in the diffusion chamber.
机译:解决的问题:在等离子处理中执行重复第一过程和第二过程的加压步骤和排气步骤解决方案:气体供应方法包括:控制第一气体管道和第二气体管道与第一气体管道之间的连通的第一加压步骤通过打开和关闭第一和第二阀11和12,扩散室16a通过打开和关闭连接到比第一阀的第一和第二阀上游侧的第三和第四阀13和14排放第一和第二气体管中的气体。第二气管,在第一工序之前关闭第一阀和第三阀,并增加第一气管中的第一气体的压力。第二加压步骤,其在第二过程之前关闭第二阀和第四阀并增加第二气体管中的第二气体的压力;排气步骤,其通过打开和关闭第五阀15来控制排气管与扩散室之间的连通,并根据第一过程和第二过程的开始而打开第五阀,并排出扩散室中的气体。

著录项

  • 公开/公告号JP2013197183A

    专利类型

  • 公开/公告日2013-09-30

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20120060636

  • 发明设计人 HANEFUJI HIDEYUKI;OGAWA HIROYUKI;

    申请日2012-03-16

  • 分类号H01L21/3065;H01L21/31;H01L23/522;H01L21/768;H01L21/3205;

  • 国家 JP

  • 入库时间 2022-08-21 17:02:46

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