Pretreatment Method of Sapphire Substrate by Using Sulfuric Acid to Fabricate High Quality Thin Films

摘要

The invention of sulfuric acid to deposit a thin film of high quality (H ₂ SO ₄ ) the solution relates to a method for pre-processing the sapphire substrate using . According to the present invention , the surface can be obtained a substrate having an extremely flat and smooth Roasting without a pit (pit) excellent surface has an average surface roughness (surface RMS roughness) to less than 0.20 nm. Further, it is possible using such a substrate to minimize the effect of a thin film deposited upon the substrate .