PATTERN DESIGN METHOD OF INTEGRATED CIRCUIT, GENERATION METHOD OF EXPOSURE MASK, EXPOSURE MASK, AND MANUFACTURING METHOD OF INTEGRATED CIRCUIT DEVICE

摘要

There is disclosed a method of designing a pattern of an integrated circuit comprising calculating the window of lithography process on a substrate, the window being calculated at least in partial data of first design data for designing the circuit pattern of integrated circuit, and the window being also calculated in consideration of a specification value of an exposure mask for use in transfer of the circuit pattern, comparing the calculated window of lithography process and the window of lithography process actually required, revising the partial data when the calculated window is smaller than the actually required window, the partial data being revised such that the window of lithography process on the substrate is equal to or larger than the actually required window, and preparing second design data, the second design data being prepared by updating the first design data by using the revised partial data.