METHOD FOR DESIGNING A PATTERN OF AN INTEGRATED CIRCUIT, A METHOD FOR FORMING AN EXPOSURE MASK, AN EXPOSURE MASK, AND A METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT DEVICE, CONCERNED WITH IMPROVING THE YIELD OF A WAFER OR A MASK IN A LITHOGRAPHY PROCESS

摘要

PURPOSE: A method for designing a pattern of an integrated circuit, a method for forming an exposure mask, an exposure mask, and a method for manufacturing an integrated circuit device are provided to form a circuit pattern efficiently by transferring a proper mask pattern. CONSTITUTION: A tolerance(1) of a lithography process on a substrate to be processed is calculated considering a specification value of an exposure mask used for transferring a circuit pattern. The tolerance is calculated with respect to at least partial data(2) of a first design data for designing the circuit pattern of an integrated circuit. The calculated tolerance of the lithography process and a tolerance of a lithography process actually required on the substrate to be processed are compared. When the calculated tolerance of lithography process is determined to be smaller than the actually required tolerance of lithography process, the partial data is revised. The first design data is revised by using the revised partial data.