BROADBAND SEMICONDUCTOR LIGHT SOURCE WITH HETERO-QUANTUM DOT STRUCTURE

摘要

A broadband semiconductor light source having a heterogeneous quantum dot structure according to the present invention includes a substrate; An active layer stacked on the substrate, the active layer having a plurality of quantum dot layers made of different materials, the active layer being stacked on at least the substrate and having quantum dots of a first material to produce light in a first wavelength band; 1 quantum dot layer; A second quantum dot layer stacked over the first quantum dot layer, the second quantum dot layer having quantum dots of a second material to produce light of a second wavelength band, wherein the first and second wavelength bands are different from each other; The second materials are different from each other.;Semiconductor light source, quantum dot, active layer, heterogeneous