首页> 外国专利> Microelectronic device chip having a fine pitch bump structure having non-conductive sidewalls, a package thereof, a liquid crystal display device comprising the same, and a manufacturing method thereof

Microelectronic device chip having a fine pitch bump structure having non-conductive sidewalls, a package thereof, a liquid crystal display device comprising the same, and a manufacturing method thereof

机译:具有具有不导电侧壁的精细间距凸点结构的微电子器件芯片,其封装,包括该微电子器件芯片的液晶显示装置及其制造方法

摘要

A semiconductor device employing the bump structure includes a plurality of bump structures arrayed along a substrate in a first direction. Each bump structure has a width in the first direction greater than a pitch gap between successively arrayed bump structures, and at least one bump structure has a sidewall facing in the first direction that is non-conductive.
机译:采用凸块结构的半导体器件包括沿第一方向在基板上排列的多个凸块结构。每个凸块结构在第一方向上的宽度大于连续排列的凸块结构之间的间距,并且至少一个凸块结构具有在第一方向上面对的侧壁,该侧壁是不导电的。

著录项

  • 公开/公告号KR100632472B1

    专利类型

  • 公开/公告日2006-10-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040025853

  • 发明设计人 권용환;강사윤;이충선;

    申请日2004-04-14

  • 分类号G02F1/1345;

  • 国家 KR

  • 入库时间 2022-08-21 21:22:50

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