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Avoiding thickness reduction of redistribution layer in seed-layer etching, by applying sacrificial layer to protect copper layer below, lifting off mask and removing seed layer by etching
Avoiding thickness reduction of redistribution layer in seed-layer etching, by applying sacrificial layer to protect copper layer below, lifting off mask and removing seed layer by etching
The method involves applying a sacrificial layer (6) to the redistribution layer (4) for protecting the copper layer (3) below during subsequent etching processes. The resist mask is removed in a lift-off step, and the seed layer is then removed by etching.
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