Power semiconductor component, has power and control assemblies, which are contacted by bonding wires of different thickness, where bonding wires serving as contact surface are thicker than contacted bonding wires

摘要

The component has multiple power assemblies (2, 3) and control assembly (4), which control the assemblies (2, 3). The assemblies (2, 3, 4) are contacted by bonding wires (21 1-21 10, 23, 24) of different thickness. Upper surfaces of the bonding wires (23, 24) serve as contact surface for the bonding wires (21 1, 21 3), respectively. The bonding wires serving as the contact surface are thicker than the contacted bonding wires.