Photolithographic mask for radiation sensitive lacquer layer structure, has auxiliary structures arranged in two rows, where minimum distance exists between structures in each row and deviates by maximum of ten percent from average value

摘要

The mask has a radiation permeable substrate with a main structure (21) and auxiliary structures (22) parallel to each other. The main and auxiliary structures are made from partial radiation impermeable material. The auxiliary structures are arranged in two rows, where a minimum distance exists between the auxiliary structures in each row. The distance between the structures deviates by a maximum of 10 percent from an average value.