Production of trenched bit lines in a semiconductor memory comprises using a mask which is produced whilst an auxiliary layer is applied on the whole surface and structured using a lacquer mask

摘要

Trenched bit line production in semiconductor memory comprises applying layer sequence of lower boundary layer (2), memory layer (3) and upper boundary layer (4) on semiconductor body (1), forming mask with openings for bit line regions, and implanting dopant to form bit lines (9) using mask. Mask is produced when auxiliary layer (5) is applied over whole surface and structured using lacquer mask so that each bit line region is exposed.