Conductive structure e.g. metal line, forming method, involves performing heat treatment of locally restricted zone, and scanning locally heated zone to reduce number of grain boundaries in length direction of metal line

摘要

The method involves forming a metal line in a dielectric layer of a metallization layer of a semiconductor device, where the line extends along a length direction. A heat treatment including heating of a locally restricted zone is performed to modify the crystalline of metals in metal lines and to enhance the purity of the metal lines. The locally heated zone is scanned along a length direction of the metal line to reduce a number of grain boundaries in the length direction.