PROBLEM TO BE SOLVED: To provide a vertical resonant-cavity light-emitting diode whose luminous output is hardly lowered even on the high-temperature side by further simplifying the structure of a reflecting layer on the light output side.;SOLUTION: The vertical resonant-cavity light-emitting diode 1 has: an active layer 5 used as a light emitting layer; and a first reflecting layer 3 on the light reflection side and a second reflecting layer 9 on the light output side, which are formed across the active layer 5. Each of the first and second reflecting layers 3 and 9 has a structure which is composed of several stacked pairs of semiconductor alternating layers exhibiting different refractive indexes. The number of pairs of the second reflecting layer 9 is ≥1/10 and ≤1/3 of that of the first reflecting layer 3. When the number of pairs of the first reflecting layer 3 is set to at least 11 but no more than 41, the luminous output can be further increased.;COPYRIGHT: (C)2008,JPO&INPIT
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