首页> 外国专利> METHOD FOR PRODUCING HIGH-PURITY MOLYBDENUM-TUNGSTEN ALLOY POWDER USED FOR RAW POWDER FOR SPUTTERING TARGET

METHOD FOR PRODUCING HIGH-PURITY MOLYBDENUM-TUNGSTEN ALLOY POWDER USED FOR RAW POWDER FOR SPUTTERING TARGET

机译:溅射靶用原粉用高纯钼钨合金粉的生产方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high-purity molybdenum-tungsten alloy powder suitable for a raw powder to be used when producing a sputtering target for forming a film of a liquid crystal and a semiconductor.;SOLUTION: The method for producing the high-purity molybdenum-tungsten alloy powder to be used as the raw powder for a sputtering target comprises the steps of: mixing each solution of ammonium salts of molybdenum and tungsten to prepare a mixture of the ammonium salts; calcining the mixture of the ammonium salts to prepare a complex oxide of molybdenum and tungsten; and reducing the complex oxide to obtain the high-purity molybdenum-tungsten alloy powder in which molybdenum and tungsten are uniformly solid-dissolved in each other.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种高纯度的钼-钨合金粉末的制造方法,该粉末适用于在形成用于形成液晶和半导体膜的溅射靶时使用的原粉末。生产用作溅射靶原粉的高纯度钼-钨合金粉末的步骤包括:将钼和钨的铵盐的每种溶液混合以制备铵盐的混合物;煅烧铵盐的混合物以制备钼和钨的复合氧化物;还原复合氧化物,得到钼和钨均匀固溶的高纯度钼钨合金粉末。;版权所有:(C)2007,日本特许厅

著录项

  • 公开/公告号JP2007092089A

    专利类型

  • 公开/公告日2007-04-12

    原文格式PDF

  • 申请/专利权人 JAPAN NEW METALS CO LTD;

    申请/专利号JP20050279007

  • 发明设计人 HAYASHI HIROYUKI;MORITA SUSUMU;

    申请日2005-09-27

  • 分类号B22F9/24;C22C1/04;C23C14/34;C22C27/04;

  • 国家 JP

  • 入库时间 2022-08-21 21:14:35

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