Advanced technology in order to form the transistor which possesses the drain and the source territory where height differs and rises

摘要

Quite, it can adjust individually vis-a-vis the device territory where epitaxial in the small-sized semiconductor device height of the semiconductor region which it grew can execute the epitaxial growth of two, or more differs. As for the epitaxial growth mask, formation of the semiconductor region in the device territory of specification is controlled selectively. In other execution form, vis-a-vis the device territory where two or more differs, making use of general epitaxial growth process in order to decrease the height of the semiconductor region which already epitaxial to the area which is good, is selected it is it grew accurately, it continues, it is possible to execute selective oxidation process in the device territory which is selected.