首页> 外国专利> Electronics and electro-optical device substrate ,, electro-optical devices, as well as the substrate for a semiconductor device and a method of manufacturing a semiconductor device substrate and a method of manufacturing an electro-optical device substrate

Electronics and electro-optical device substrate ,, electro-optical devices, as well as the substrate for a semiconductor device and a method of manufacturing a semiconductor device substrate and a method of manufacturing an electro-optical device substrate

机译:电子和电光装置基板,电光装置以及半导体装置用基板,半导体装置基板的制造方法以及电光装置基板的制造方法

摘要

PROBLEM TO BE SOLVED: To simply fabricate a highly reliable capacity on a substrate.;SOLUTION: A method for manufacturing a substrate for an electrooptical device is provided with: a layer forming step to laminate a lower conductive layer to be a lower electrode of the capacity, an intermediate layer to be a dielectric film of the capacity and an upper conductive layer to be an upper electrode of the capacity on the substrate in this order, wherein the lower conductive layer is formed of a material with an etching rate, with respect to an etchant of a specified kind, lower than that of a component of the upper conductive layer; a mask forming step to form a mask with a specified two-dimensional pattern on the upper conductive layer; a patterning step to pattern the upper conductive layer, the intermediate layer and the lower conductive layer by etching via the mask, wherein the etchant is used at least for the upper conductive layer and the lower conductive layer; and a exfoliating step to exfoliate the mask.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了简单地在基板上制造高度可靠的容量。解决方案:一种用于制造电光装置的基板的方法包括:层形成步骤,其将下部导电层层压为基板的下部电极。电容,中间层作为电容的介电膜,上导电层作为电容在基板上的顺序,其中下导电层由具有蚀刻速率的材料制成特定种类的蚀刻剂,其低于上导电层的成分;掩模形成步骤,以在上导电层上形成具有指定二维图案的掩模;构图步骤,以通过掩模进行刻蚀对上导电层,中间层和下导电层进行构图,其中至少将蚀刻剂用于上导电层和下导电层。 ;以及去角质面膜的去角质步骤。;版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP3997979B2

    专利类型

  • 公开/公告日2007-10-24

    原文格式PDF

  • 申请/专利权人 セイコーエプソン株式会社;

    申请/专利号JP20030364731

  • 发明设计人 森脇 稔;

    申请日2003-10-24

  • 分类号G02F1/1368;

  • 国家 JP

  • 入库时间 2022-08-21 21:11:14

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