And a method of manufacturing the depletion mode FET and monolithic integrated enhancement mode

摘要

I provide a monolithic integrated enhancement mode / depletion mode FET devices that uniformity of quality and enhanced stability to reduce the [challenge] manufacturing cost. I an integrated circuit monolithically with (E mode) FET enhancement mode (D mode) FET depletion mode in the semiconductor multilayer structure of the resolution means a single. Providing a channel layer in the multilayer structure, it overlays the barrier layer on top of it that overlay the ohmic contact layer thereon. I connected to the ohmic contact layer the drain contact and source contacts of the E-mode FET and D-mode FET these. I also connected to the barrier layer of the gate contact E-mode FET and D-mode FET. I provide an amorphous area under the E-mode gate contact in the barrier layer. This amorphous region is configure the embedded E-mode Schottky contact between the barrier layer. Is connected to the first layer which is overlaid on the barrier layer and the gate contact of the D-mode FET in the embodiment, instead, to form a D-mode amorphized regions in the layer of the first. [Selection Figure 6