Low dielectric constant material and CVD processing method

摘要

Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z = 100%, v is from 10 to 35 atomic%, w is from 10 to 65 atomic% y is from 10 to 50 atomic%, x is from 1 to 30 atomic%, z is from 0.1 to 15 atomic%, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.