Oxygen precipitation behavior estimate method in the silicon monocrystal and production parameter decisive method of the silicon monocrystal, the memory medium which remembers the program for oxygen precipitation behavior estimate in silicon monocrystal

摘要

Density of the thermal donor who occurs according to the heat history between the 550C from the 400C which early oxygen density and the silicon monocrystal in the silicon monocrystal receive the case of grain growth and, nuclear occurrence speed of the oxygen deposit which when it heat-treated the silicon monocrystal with the heat treatment process occurs in the silicon monocrystal is calculated by specifying. Furthermore density and the oxygen precipitation quantity of the oxygen deposit in the heat treatment condition for adding to the silicon monocrystal optional heat treatment condition by specifying, are estimated with operation.