Numerical Analysis on Cooling Process of Monocrystal Silicon Rod Manufactured with Czochralski Method

摘要

A numerical analysis was performed to investigate the temperature distribution and thermal stress field in monocrystal silicon rod in the cooling process of manufactured with Czochralski (CZ) method. The thermally-induced residual stress fields of silicon rod under different length of cool-down time conditions were obtained as well as temperature fields, respectively. All simulations were finished by using ANSYS finite element code. It showed that, maximum thermal stress was mainly appeared on rod surface, the influence of length of cool-down time on it was not remarkable, the magnitude of it was far below the critical strength of silicon throughout.