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POLYDIODE STRUCTURE FOR PHOTO DIODE

机译:光电二极管的多晶硅结构

摘要

An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
机译:一种用于将入射光信号转换为电信号的集成电路器件,包括:半导体衬底;形成在半导体衬底内部的阱区;形成在阱区上方的介电层;以及用于接收入射光信号的多晶硅层。在介电层上,包括p型部分,n型部分和设置在p型和n型部分之间的未掺杂部分,其中,阱区被偏置以控制多晶硅层以提供电信号。 。

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