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DIFFERENT-VOLTAGE DEVICE MANUFACTURED BY A CMOS COMPATIBLE PROCESS AND HIGH-VOLTAGE DEVICE USED IN THE DIFFERENT-VOLTAGE DEVICE
DIFFERENT-VOLTAGE DEVICE MANUFACTURED BY A CMOS COMPATIBLE PROCESS AND HIGH-VOLTAGE DEVICE USED IN THE DIFFERENT-VOLTAGE DEVICE
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机译:由CMOS兼容工艺制造的不同电压的装置以及在该不同电压的装置中使用的高电压的装置
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摘要
A method of manufacturing different-voltage devices mainly comprises forming at least one high-voltage well in high-voltage device regions, at least one N-well in low-voltage device regions, at least one P-well in low-voltage device regions, source/drain wells in high-voltage device regions, and isolation wells in isolation regions in a p-type substrate. The breakdown voltage is adjusted by modulating the ion doping profile. Furthermore, parameters of implanting conductive ions are adjusted for implanting conductive ions into both high-voltage device regions and low-voltage device regions. The isolation wells formed in isolation regions between devices are for separating device formed over high-voltage device regions and device formed over low-voltage device regions. The thickness of a HV gate oxide layer is thicker than the thickness of an LV gate oxide layer for modulating threshold voltages of high-voltage devices and low-voltage devices.
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