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Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
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机译:用于基于III族氮化物的器件的硅碳锗(SiCGe)衬底
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摘要
A substrate for an electronic device formed in a group III nitride material system comprises a layer of silicon carbon and a layer of silicon carbon germanium over the layer of silicon carbon, the layer of silicon carbon and the layer of silicon carbon germanium forming a substrate for a device formed in the group III nitride material system.
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