Methods of fabricating thin ferroelectric layers and capacitors having ferroelectric dielectric layers therein

摘要

Methods of forming ferroelectric layers include forming a ferroelectric layer on a substrate and chemically-mechanically polishing a surface of the ferroelectric layer by rotating a polishing pad on the surface at a rotation speed in a range from about 5 rpm to about 25 rpm. This polishing step includes pressing the polishing pad onto the surface of the ferroelectric layer at a pressure in a range from about 0.5 psi to about 3 psi. This polishing step may be followed by the step of exposing the polished surface to a rapid thermal anneal. This anneal can be performed in an inert atmosphere containing a gas selected from a group consisting of nitrogen, helium, argon and neon.