首页> 中文期刊> 《理论物理通讯:英文版》 >Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

         

摘要

By taking into account the two-spin interaction in the transverse Ising model(TIM),the influence of the defect layers(including J_B andΩ_B) on the polarization and Curie temperature are calculated numerically,within the framework of the decoupling approximation under Green's function.The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of J_B and the small value ofΩ_B of the defect layers.Meanwhile,the dependence of the crossover values of the exchange interaction J a,the transverse GeldΩ_A of the bulk material on the exchange interaction J_B and the transverse fieldΩ_B of the defect layers are shown in 3-Dimensional(3-D) figures for the first time.Moreover,the transition features of the ferroelectric thin film with defect layers are presented.

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