首页> 外国专利> Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

机译:透明导电性薄膜,其制造方法,烧结靶及其制造方法,显示面板用透明导电性基板以及有机电致发光元件

摘要

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.
机译:透明导电薄膜可以很容易地通过具有烧结靶的溅射等来制造,不需要诸如蚀刻或研磨之类的后处理,电阻低并且表面光滑度优异,并且在低透射率下具有高透射率。可见光的波长范围;包括透明导电性薄膜的透明的导电性显示面板用基板和有机电致发光元件均具有优异的发光特性。更具体地说,一种透明导电薄膜,它以氧化铟为主要成分,并以硅作为掺杂剂,具有基本上为非晶态的结构,其中硅在铟上的原子含量为0.5〜13%(原子)。透明导电性薄膜,其特征在于,以氧化铟为主要成分并含有钨和锗,W / In原子比为0.003〜0.047,钨和Ge / In原子比为0.001〜0.190。

著录项

  • 公开/公告号US7276186B2

    专利类型

  • 公开/公告日2007-10-02

    原文格式PDF

  • 申请/专利权人 YOSHIYUKI ABE;

    申请/专利号US20060447870

  • 发明设计人 YOSHIYUKI ABE;

    申请日2006-06-07

  • 分类号H01B1/08;

  • 国家 US

  • 入库时间 2022-08-21 21:01:54

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