Characterization of transparent and conductive ZnO_Ga thin films produced by rf sputtering at room temperature

摘要

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7x10~(-4) Ωcm, a Hall mobility of 18 cm~2/Vs and a carrier concentration of 1.3 x 10~(21) cm~(-3) were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85%, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.