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Semiconductor memory device having high electrical performance and mask and photolithography friendliness
Semiconductor memory device having high electrical performance and mask and photolithography friendliness
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机译:具有高电性能以及掩模和光刻友好性的半导体存储器件
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摘要
A semiconductor memory device comprises a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.
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