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Fully depleted SOI MOSFET arrangement with sunken source/drain regions
Fully depleted SOI MOSFET arrangement with sunken source/drain regions
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机译:具有凹陷的源/漏区的全耗尽SOI MOSFET布置
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摘要
A fully depleted SOI MOSFET arrangement includes a buried oxide (BOX) layer with recesses in the BOX layer and a post extended upwardly between the recesses. A thin channel region is formed on the post and a gate over the channel. Deep source/drain region are adjacent to the channel region and extend into the recesses.
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