Mesa isolation technology for extremely thin silicon-on-insulator semiconductor devices

摘要

Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm in thickness are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI semiconductor devices can be efficiently manufactured by mesa isolation techniques. A method of forming a plurality of semiconductor devices is provided comprising a SOI structure. The SOI structure comprises a substrate, an insulating layer overlying the substrate, and a silicon layer overlying the insulating layer, wherein the silicon layer has a thickness less than 20 nm. The silicon layer is patterned to create at least two laterally spaced apart silicon layers. A semiconductor device is formed at each of the at least two laterally spaced apart silicon layers.