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Shallow trench isolation structure for strained Si on SiGe
Shallow trench isolation structure for strained Si on SiGe
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机译:SiGe上应变硅的浅沟槽隔离结构
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摘要
A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.
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