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COPPER ELECTROPLATING LIQUID, PRETREATMENT LIQUID FOR COPPER ELECTROPLATING AND METHOD OF COPPER ELECTROPLATING

机译:铜电镀液,用于铜电镀的预处理液和铜电镀方法

摘要

IN FILLING FINE VIA HOLES OR TRENCHES OF THE WIRING (LSI) PATTERN FORMED ON A SEMICONDUCTOR WAFER, A COPPER ELECTROPLATING IS CARRIED OUT BY USING A COPPER ELECTROPLATING SOLUTION. CONTAINING AN AZOLE OR A SILANE COUPLING AGENT, OR A COPPER ELECTROPLATING IS CARRIED OUT. AFTER THE IMMERSION INTO A PRETREATMENT SOLUTION CONTAINING AN AZOLE OR A SILANE COUPLING AGENT.AS ILLUSTRATIVELY SHOWN ABOVE, THE ADDITION OF A COMPONENT HAVING THE ACTION TO INHIBIT THE DISSOLUTION OF COPPER AN ELECTROPLATING SOLUTION OR THE PRETREATMENT BY A SOLUTION CONTAINING A COMPONENT HAVING THE ACTION TO INHIBIT THE DISSOLUTION OF COPPER CAN INHIBIT THE DISSOLUTION OF A COPPER SEED LAYER COVERING POORLY, AND THUS CAR. PREVENT THE OCCURRENCE OF DEFECTS SUCH AS VOIDS AND SEAMS
机译:在通过细孔或沟槽填充半导体晶片上形成的布线(LSI)图案时,通过使用铜电镀溶液来进行铜电镀。包含唑或硅烷偶联剂,或已进行铜电镀。如上图所示,在浸入包含偶氮基或硅烷偶联剂的预处理溶液后,添加一种成分可防止溶液中溶出的铜或固溶体通过溶液或溶液进行预处理为了抑制铜的溶解,可以抑制铜种子层的覆盖不良以及汽车的溶解。防止出现缺陷(如空洞和缝隙)

著录项

  • 公开/公告号MY127269A

    专利类型

  • 公开/公告日2006-11-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号MYPI 20010160

  • 发明设计人 JUNNOSUKE SEKIGUCHI;SYUNICHIRO YAMAGUCHI;

    申请日2001-01-13

  • 分类号C25D3/38;C25D5/34;

  • 国家 MY

  • 入库时间 2022-08-21 20:55:58

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