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Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer

机译:在高真空下从离子液体直接在钽上电镀铜:氧化钽层的起源

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摘要

In this paper, it is shown that high vacuum conditions are not sufficient to completely remove water and oxygen from the ionic liquid 1-ethyl-3-methylimidazolium chloride. Complete removal of water demands heating above 150 1C under reduced pressure, as proven by Nuclear Reaction Analysis (NRA). Dissolved oxygen gas can only be removed by the use of an oxygen scavenger such as hydroquinone, despite the fact that calculations show that oxygen should be removed completely by the applied vacuum conditions. After applying a strict drying procedure and scavenging of molecular oxygen, it was possible to deposit copper directly on tantalum without the presence of an intervening oxide layer.
机译:本文表明,高真空条件不足以从离子液体1-乙基-3-甲基咪唑鎓盐中完全除去水和氧气。如要通过核反应分析(NRA)证明,要完全除去水,需要在减压下加热至150 1C以上。尽管计算表明应在所施加的真空条件下彻底清除氧气,但只能使用氧气清除剂(例如氢醌)除去溶解的氧气。在应用严格的干燥程序并清除分子氧之后,有可能在不存在中间氧化物层的情况下将铜直接沉积在钽上。

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