A METHOD FOR MAKING SELF-REGISTERING NON-LITHOGRAPHIC TRANSISTORS WITH ULTRASHORT CHANNEL LENGTHS

摘要

In a method for making transistors with ultrashort channel length, thedeposition of respectively source, drain and gate electrodes initially can beperformed with prior art technology limiting the electrode dimensionsaccording to applicable design rules, while the dimensions of every second ofthese electrodes in subsequent process steps can be adjusted as desired. Achannel area is formed between a source and a drain electrode without beingconstrained by any design rule and this allows the formation of transistorchannels with extremely short channel lengths L, e.g. well below 10 nm.Correspondingly the width of the gate electrodes can be adjusted to alsoobtain a large channel width W and hence provide transistors with almostarbitrarily large aspect ratios W/L and thus desirable switching and currentcharacteristics. The method can be applied to make any kind of field-effecttransistor, even on the same substrate and may be adjusted for the fabricationof other kinds of transistor structures as well.