BUILDING FULLY-DEPLETED AND PARTIALLY-DEPLETED TRANSISTORS ON SAME CHIP

摘要

A method is disclosed for forming a fully-depleted silicon-on-insulator (FD-SOI) transistors (150) and partially-depleted silicon-on-insulator (FD-SOI) transistors (152) on a semiconductor substrate (104) as part of a single integrated circuit fabrication process flowd. Semiconductor device structures fabricated according to the method are also disclosed.