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BUILDING FULLY-DEPLETED AND PARTIALLY-DEPLETED TRANSISTORS ON SAME CHIP
BUILDING FULLY-DEPLETED AND PARTIALLY-DEPLETED TRANSISTORS ON SAME CHIP
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机译:在同一芯片上构建全耗尽和部分耗尽的晶体管
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摘要
An integrated circuit having fully-depleted silicon-on-insulator (FD-SOI) transistors and partially-depleted silicon-on-insulator (PD-SOI) transistors on a semiconductor substrate is disclosed.
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