SYSTEM FOR LOW-ENERGY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

摘要

A system (10) for low-energy plasma-enhanced chemical vapor deposition comprising plasma source (100), deposition chamber (200) and gas distribution system (300) for semiconductor epitaxy on substrates up to 300 mm in size is described. The system (10) allows for fast switching from high to low deposition rates, and film thickness control at the monolayer level. It incorporates chamber self-cleaning and the provisions for selective epitaxial growth. The system (10) contains a broad-area plasma source (100) which can be used also in other applications, such as low-energy ion implantation and plasma treatment of surfaces.