INTEGRATED CIRCUIT USED IN SMART POWER TECHNOLOGY

摘要

The invention relates to an integrated circuit used in smart power technology, particularly for use in the automobile domain, which has at least the following: high-voltage connections (a1, a2) for connecting to a high-voltage (UH); a smart circuit device (3) with low-voltage components, and; an ESD protective circuit (4), which is connected between the high-voltage connections (a1, a2) and which has a MOSFET (T1) connected via its source (S) and its drain (D) to the high-voltage connections (a1, a2). The gate (G) of the MOSFET is connected via a resistor (Rg) to the source (S) of the MOSFET. The gate resistor (Rg) is made of polycrystalline silicon. According to the invention, a high ESD strength with a relatively low surface use i.e. low costs can be achieved by using the poly-resistor as a gate resistor (Rg). A protective diode (D1, D2) can be advantageously connected between the source (S) and gate (G) and between the gate (G) and drain (D) of the MOSFET (T1) each time in a blocking direction, this protective diode blocking above the supply voltage (UH).