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METHOD FOR MANUFACTURING PCB IMBEDDED CAPACITOR USING ATOMIC LAYER DEPOSITION PROCESS, AND CAPACITOR THUS OBTAINED

机译:利用原子层沉积工艺制造PCB嵌入式电容器的方法,以及由此获得的电容器

摘要

A method for manufacturing a PCB(Printed Circuit Board) embedded capacitor using an atomic layer deposition process and the capacitor are provided to minimize damages to a dielectric film by successively forming Ru seed layers on an Al2O3 film using the ALD(Atomic Layer Deposition) process. A lower electrode is mounted inside a reaction chamber. An Al metal precursor is introduced inside the reaction chamber, such that the Al metal precursor is attached to the lower electrode. Oxide gas is supplied to oxidize the Al metal to form an Al2O3 dielectric film. An Ru source is supplied into the reaction chamber, such that an Ru metal seed layer is formed on the dielectric film. An upper electrode is formed on the Ru seed layer. The Al metal precursor is a TMA(Thin Film Micromirror).
机译:提供一种使用原子层沉积工艺制造PCB(印刷电路板)嵌入式电容器的方法,并且提供了一种电容器,以通过使用ALD(原子层沉积)工艺在Al2O3膜上连续形成Ru籽晶层,从而使对介电膜的损害最小。下电极安装在反应室内。将Al金属前驱物引入反应室内,使得Al金属前驱物附着至下部电极。供应氧化物气体以氧化Al金属以形成Al 2 O 3介电膜。将Ru源供应到反应室中,从而在介电膜上形成Ru金属籽晶层。上电极形成在Ru种子层上。 Al金属前体是TMA(薄膜微镜)。

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