DIELECTRIC FILM STRUCTURE FORMATION METHOD WITH EXCELLENT PROPERTIES THROUGH AN ATOMIC LAYER DEPOSITION PROCESS, A CAPACITOR MANUFACTURING METHOD USING THE SAME, AND A CAPACITOR

摘要

PURPOSE: A dielectric film structure formation, a capacitor manufacturing method using the same, and a capacitor are provided to repeat a metal precursor thin film formation step and fuzzy pumping step on a substrate by supplying a source gas, thereby arranging a dielectric film structure with improved electrical properties and a high dielectric constant.;CONSTITUTION: A substrate is loaded in a process chamber(S10). A source gas including a precursor is chemically absorbed on the substrate in the process chamber in order to arrange a precursor thin film(S20). The process chamber is pumped and fuzzy in order to eliminate a physically absorbed metal precursor on the precursor thin film and the source gas remaining in the process chamber(S30). A precursor thin film formation step and a first fuzzy and pumping step are repeated(S40). A bulk oxide film is arranged by supplying oxidizer on the precursor thin film(S50). The process chamber is pumped and fuzzy in order to eliminate oxidizer which is not interacting with the bulk oxide film(S60). A dielectric layer is arranged on the bulk oxide film(S80).;COPYRIGHT KIPO 2012